Compact MOSFET Models for VLSI Design
John Wiley & Sons, 23. srp 2009. - Broj stranica: 512
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models.
This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference.
Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
Što ljudi govore - Napišite recenziju
2 Ideal Metal Oxide Semiconductor Capacitor
3 Nonideal and Nonclassical MOS Capacitors
4 Long Channel MOS Transistor
5 The Scaled MOS Transistor
6 Quasistatic Nonquasistatic and Noise Models
7 Quantum Phenomena in MOS Transistors