Compact MOSFET models for VLSI design
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI
eBook, English, ©2009
John Wiley & Sons (Asia) ; IEEE Press, Singapore, Hoboken, NJ, ©2009
1 online resource (xxiv, 432 pages) : illustrations
9780470823439, 9780470823446, 9786612382109, 0470823437, 0470823445, 6612382104
520990512
Semiconductor physics review for MOSFET modeling
Ideal metal oxide semiconductor capacitor
Non-ideal and non-classical MOS capacitors
Long channel MOS transistor
The scaled MOS transistor
Quasistatic, non-quasistatic, and noise models
Quantum phenomena in MOS transistors
Non-classical MOSFET structures
Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate
Appendix B : features of select compact MOSFET models
Appendix C : PSP two-point collocation method